STP4N62K3 STMicroelectronics, STP4N62K3 Datasheet - Page 6

• Manufacturer Part Number: STP4N62K3
• Description: MOSFET N-CH 620V 3.8A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STP4N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.95 Ohm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.95 Ohms
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 3.8 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10651-5

Electrical characteristics
2.1
6/18
Figure 2.
Figure 4.
Figure 6.
0.01
0.01
0.01
0.1
0.1
0.1
(A)
(A)
(A)
10
10
10
I
I
I
D
D
D
1
1
1
0.1
0.1
0.1
Electrical characteristics (curves)
Safe operating area for TO-220,
I²PAK
Safe operating area for TO-220FP
Safe operating area for IPAK
1
1
1
10
10
10
Tj=150°C
Tc=25°C
Tj=150°C
Tc=25°C
Tc=25°C
Single pulse
Tj=150°C
Single pulse
Single pulse
100
100
100
V
V
V
DS
DS
DS
(V)
(V)
(V)
Doc ID 17548 Rev 2
100µs
100µs
100µs
AM07172v1
10µs
1ms
10ms
AM07174v1
10µs
1ms
10ms
AM07173v1
10µs
1ms
10ms
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220,
I²PAK
Thermal impedance for TO-220FP
Thermal impedance for IPAK
STF/I/P/U4N62K3