S29GL256P11TFI020 Spansion Inc., S29GL256P11TFI020 Datasheet - Page 71
![Flash 3V 256Mb Mirrorbit lowest address110ns](/photos/16/11/161172/s29gl512p11tfi020_sml.jpg)
S29GL256P11TFI020
Manufacturer Part Number
S29GL256P11TFI020
Description
Flash 3V 256Mb Mirrorbit lowest address110ns
Manufacturer
Spansion Inc.
Datasheet
1.S29GL128P11TFI020.pdf
(80 pages)
Specifications of S29GL256P11TFI020
Memory Type
NOR
Memory Size
256 Mbit
Access Time
110 ns
Data Bus Width
8 bit, 16 bit
Architecture
Uniform
Interface Type
Page-mode
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
50 mA
Mounting Style
SMD/SMT
Operating Temperature
+ 85 C
Package / Case
TSOP-56
Memory Configuration
128K X 16
Ic Interface Type
Parallel
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
56
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
S29GL256P11TFI020
Manufacturer:
SPANSION
Quantity:
5 530
Company:
Part Number:
S29GL256P11TFI020
Manufacturer:
SPANSION
Quantity:
5 530
Company:
Part Number:
S29GL256P11TFI020
Manufacturer:
Spansion
Quantity:
135
November 20, 2009 S29GL-P_00_A12
Read
Reset
CFI Query
Program
Write to Buffer
Program Buffer to Flash (confirm)
Write-to-Buffer-Abort Reset
Chip Erase
Sector Erase
Erase Suspend/Program Suspend
Erase Resume/Program Resume
Secured Silicon Sector Entry
Secured Silicon Sector Exit
Legend
X = Don’t care
RA = Address of the memory to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on
the falling edge of the WE# or CE# pulse, whichever happens later.
Notes
1. See
2. All values are in hexadecimal.
3. All bus cycles are write cycles unless otherwise noted.
4. Data bits DQ15-DQ8 are don’t cares for unlock and command cycles.
5. Address bits A
6. No unlock or command cycles required when reading array data.
7. The Reset command is required to return to reading array data when
8. See
9. The fourth, fifth, and sixth cycles of the autoselect command sequence are
10. The data is 00h for an unprotected sector and 01h for a protected sector.
11. The data value for DQ7 is “1” for a serialized, protected Secured Silicon
unless SA or PA required. (A
device is in the autoselect mode, or if DQ5 goes high (while the device is
providing status data).
read cycles.
See
Status Read except that the protect and unprotect statuses are inverted
here.
Sector region and “0” for an unserialized, unprotected region. See
Table 7.3 on page 22
(6)
Manufacturer ID
Device ID
Sector Protect Verify
Secure Device Verify
Enter
Sector Erase
Chip Erase
Reset
(7)
Program
Table 7.1 on page 19
Table 7.2 on page 22
Autoselect on page 21
(12)
(16)
Command (Notes)
(13)
(15)
(8)
(15)
MAX
(15)
:A16 are don’t cares for unlock and command cycles,
for data and definitions.
(10)
(11)
(19)
(14)
for description of bus operations.
for device ID values and definitions.
for more information. This is same as PPB
MAX
(18)
(17)
is the Highest Address pin.).
Table 12.3 S29GL-P Memory Array Command Definitions, x8
1
1
4
6
4
4
1
6
1
3
3
2
2
2
2
6
6
1
1
3
4
4
Addr
XXX
AAA
AAA
AAA
AAA
AAA
AAA
AAA
AAA
XXX
XXX
XXX
XXX
AAA
AAA
XXX
XXX
AAA
AAA
RA
AA
SA
D a t a
First
S29GL-P MirrorBit
Data
RD
AA
AA
AA
AA
AA
AA
AA
AA
A0
AA
AA
B0
AA
AA
F0
98
29
80
80
90
30
S h e e t
Addr
XXX
XXX
555
555
555
555
555
555
555
555
555
555
555
555
PA
SA
Second
Data
PD
55
55
55
30
10
00
55
55
55
55
55
55
55
55
55
®
PD = Data to be programmed at location PA. Data latches on the rising edge
of the WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased.
Address bits A
WBL = Write Buffer Location. The address must be within the same write
buffer page as PA.
WC = Word Count is the number of write buffer locations to load minus 1.
12. Command is valid when device is ready to read array data or when device
13. Depending on the number of words written, the total number of cycles may
14. Command sequence returns device to reading array after being placed in
15. The Unlock-Bypass command is required prior to the Unlock-Bypass-
16. The Unlock-Bypass-Reset command is required to return to reading array
17. The system can read and program/program suspend in non-erasing
18. The Erase Resume/Program Resume command is valid only during the
19. The Exit command returns the device to reading the array.
Flash Family
is in autoselect mode.
be from 6 to 69.
a Write-to-Buffer-Abort state. Full command sequence is required if
resetting out of abort while in Unlock Bypass mode.
Program command.
data when the device is in the unlock bypass mode.
sectors, or enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
Erase Suspend/Program Suspend modes.
Addr
AAA
AAA
AAA
AAA
AAA
AAA
AAA
AAA
AAA
AAA
555
SA
Bus Cycles (Notes 1–5)
Third
max
Data
A0
90
90
90
90
25
F0
20
80
80
88
90
–A16 uniquely select any sector.
[SA]X04
Addr
AAA
AAA
X00
X02
X06
SA
XX
PA
Fourth
XX7E
Data
(10)
(11)
WC
PD
AA
AA
01
00
Addr
WBL
X1C
555
555
Fifth
Data
PD
(8)
55
55
Addr
WBL
AAA
X1E
SA
Sixth
Data
PD
(8)
10
30
71