BSC0901NS Infineon Technologies, BSC0901NS Datasheet - Page 11
BSC0901NS
Manufacturer Part Number
BSC0901NS
Description
MOSFET N-CH 30V 100A 8TDSON
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSC0901NS.pdf
(12 pages)
Specifications of BSC0901NS
Input Capacitance (ciss) @ Vds
2800pF @ 15V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.9 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Power - Max
69W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.6 mOhms
Forward Transconductance Gfs (max / Min)
140 S, 70 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSC0901NSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSC0901NS
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSC0901NSATMA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSC0901NSI
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSC0901NSIATMA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
OptiMOS™ Power-MOSFET
BSC0901NS
Package outline
Figure 2
Outlines PG-TDSON-8 tape, dimension in mm/inches
Final Data Sheet
10
2.0, 2011-03-01