BSC0901NS Infineon Technologies, BSC0901NS Datasheet - Page 2

• Manufacturer Part Number: BSC0901NS
• Description: MOSFET N-CH 30V 100A 8TDSON
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSC0901NS

• Input Capacitance (ciss) @ Vds: 2800pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.9 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Power - Max: 69W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 mOhms
• Forward Transconductance Gfs (max / Min): 140 S, 70 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSC0901NSTR

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OptiMOS™30V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™ 30V
the best choice for the demanding requirements of voltage regulator solutions in
Servers, Datacom and Telecom applications. Super fast switching Control FETs
together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS™ products are available in high performance packages to tackle your
most challenging applications giving full flexibility in optimizing space, efficiency
and cost. OptiMOS™ products are designed to meet and exceed the energy
efficiency and power density requirements of the sharpened next generation
voltage regulation standards in computing applications.
Features
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Applications
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Table 1
Q
Q
1) J-STD20 and JESD22
Final Data Sheet
Parameter
V
R
I
Type
BSC0901NS
D
OSS
g
DS
DS(on),max
.
typ
Optimized for high performance buck converters
100% avalanche tested
Very low on-resistance R
N-channel
Qualified according to JEDEC
Superior thermal resistance
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
On board power for server
Power managment for high performance computing
Synchronous rectification
High power density point of load converters
Description
Key Performance Parameters
Value
30
1.9
100
25
44
Package
PG-TDSON-8
DS(on)
1)
@ V
for target applications
GS
=4.5 V
Unit
V
mΩ
A
nC
Marking
1
0901NS
Related Links
IFX OptiMOS webpage
IFX OptiMOS product brief
IFX OptiMOS spice models
IFX Design tools
OptiMOS™ Power-MOSFET
2.0, 2011-03-01
BSC0901NS