BSC0901NS Infineon Technologies, BSC0901NS Datasheet - Page 6

• Manufacturer Part Number: BSC0901NS
• Description: MOSFET N-CH 30V 100A 8TDSON
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSC0901NS

• Input Capacitance (ciss) @ Vds: 2800pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.9 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Power - Max: 69W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 mOhms
• Forward Transconductance Gfs (max / Min): 140 S, 70 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSC0901NSTR

5
Final Data Sheet
Table 8
Table 9
1 Power dissipation
3 Safe operating area
P
I
D
tot
=f(V
= f(
DS
T
); T
C
)
j
Electrical characteristics diagrams
=25 °C; D=0; parameter: T
T
C
=25 °C
p
5
2 Drain current
I
Z
D
4 Max. transient thermal impedance
(thJC)
=f(T
=f(t
C
);
p
); parameter: D=t
parameter
Electrical characteristics diagrams
OptiMOS™ Power-MOSFET
:V
GS
p
/T
2.0, 2011-03-01
BSC0901NS