CGH40006S Cree Inc, CGH40006S Datasheet
CGH40006S
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CGH40006S Summary of contents
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... W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits ...
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... Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Soldering Temperature 1 Thermal Resistance, Junction to Case 2 Case Operating Temperature 2 Note: Refer to the Application Note on soldering at 1 Measured for the CGH40006S Electrical Characteristics (T Characteristics Symbol DC Characteristics 1 Gate Threshold Voltage V GS(th) Gate Quiescent Voltage V ...
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... Typical Performance Small Signal Gain vs Frequency the CGH40006S in the CGH40006S- 1.0 1.5 Input & Output Return Losses vs Frequency the CGH40006S in the CGH40006S- -10 -12 -12 -14 -16 -18 -20 -22 -24 -26 1.0 1.5 Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...
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... Typical Performance Power Gain vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S- Drain Efficiency vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB 70% 60% 50% 40% 30% 20% 10 Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...
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... Typical Performance Power Gain vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S- Drain Efficiency vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB 100% 90% 80% 70% 60% 50% 40% 30% 20% 10 Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...
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... Typical Performance Power Gain vs Frequency of the CGH40006S in the CGH40006S- Output Power vs Frequency of the CGH40006S in the CGH40006S- Drain Efficiency vs Frequency of the CGH40006S in the CGH40006S- 70% 60% 50% 40% 30% 20% 10% 0% Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...
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... Typical Performance Third Order Intermodulation Distortion vs Total Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB 0 -10 -20 -30 -40 -50 - Electrostatic Discharge (ESD) Classifications Parameter Human Body Model Charge Device Model Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...
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... Simulated Maximum Available Gain and K Factor of the CGH40006S Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006S Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. ...
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... CGH40006S CW Power Dissipation De-rating Curve Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Source and Load Impedances Frequency (MHz) 1000 2000 3000 4000 5000 6000 Note 28V Note 2. Optimized for power gain, P Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability ...
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... CGH40006S-TB Demonstration Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH40006S Rev 1.0 Preliminary Bill of Materials Amplifier Circuit Description RES, AIN, 0505, 470 Ohms (≤5% tolerance) RES, AIN, 0505, 50 Ohms (≤ ...
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... CGH40006S-TB Demonstration CGH40006S-TB Demonstration Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH40006S Rev 1.0 Preliminary Schematic Amplifier Circuit Outline Amplifier Circuit Cree, Inc. ...
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... Typical Package S-Parameters for CGH40006S (Small Signal Frequency Mag S11 Ang S11 500 MHz 0.933 -92.95 600 MHz 0.922 -104.26 700 MHz 0.912 -113.77 800 MHz 0.905 -121.83 900 MHz 0.899 -128.73 1.0 GHz 0.894 -134.72 1.1 GHz 0.891 -139.97 1.2 GHz ...
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... Product Dimensions CGH40006S (Package Type — 440203) Pin Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CGH40006S Rev 1.0 Preliminary Input/Output GND RF IN ...
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... Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 14 CGH40006S Rev 1.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1 ...