CGH40006S Cree Inc, CGH40006S Datasheet - Page 5

• Manufacturer Part Number: CGH40006S
• Description: FET RF HEMT 6GHZ 28V 3X3QFN
• Manufacturer: Cree Inc

Specifications of CGH40006S

• Voltage - Rated: 84V
• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 12dB
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 8W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Package / Case: -
• Other names: CGH40006STR

Typical Performance
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
5
CGH40006S Rev 1.0 Preliminary
Drain Efficiency vs Input Power as a Function of Frequency
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
14
12
10
Power Gain vs Input Power as a Function of Frequency
8
6
4
2
0
10
10
12
12
of the CGH40006S in the CGH40006S-TB
of the CGH40006S in the CGH40006S-TB
14
14
2.0 GHz
3.0 GHz
4.0 GHz
5.0 GHz
6.0 GHz
2.0 GHz
3.0 GHz
4.0 GHz
5.0 GHz
6.0 GHz
V
16
V
16
DD
DD
= 28 V, I
= 28 V, I
18
18
Drain Efficiency vs. Pin
Gain vs input power
Input Power (dBm)
Input Power (dBm)
20
20
DQ
DQ
22
22
= 100 mA
= 100 mA
24
24
26
26
28
28
30
30
32
32
34
34
USA Tel: [phone]
www.cree.com/wireless
Fax: [phone]
Durham, NC 27703
4600 Silicon Drive
Cree, Inc.