CGH40006S Cree Inc, CGH40006S Datasheet - Page 2

• Manufacturer Part Number: CGH40006S
• Description: FET RF HEMT 6GHZ 28V 3X3QFN
• Manufacturer: Cree Inc

Specifications of CGH40006S

• Voltage - Rated: 84V
• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 12dB
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 8W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Package / Case: -
• Other names: CGH40006STR

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Note:
1
2
Electrical Characteristics (T
Notes:
1
2
3
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature
Thermal Resistance, Junction to Case
Case Operating Temperature
Characteristics
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
Drain-Source Breakdown Voltage
RF Characteristics
Small Signal Gain
Power Output at P
Drain Efficiency
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
2
Refer to the Application Note on soldering at
Measured for the CGH40006S at P
Measured on wafer prior to packaging.
Drain Efficiency = P
Measured in CGH40006S-TB.
CGH40006S Rev 1.0 Preliminary
3
IN
2
= 32 dBm
1
(T
1
C
= 25
OUT
2
/ P
˚
C, F
DC
0
2
= 2.0 GHz unless otherwise noted)
Symbol
VSWR
V
V
P
V
G
C
C
C
GS(th)
GS(Q)
I
OUT
DS
η
DISS
GD
BR
SS
GS
DS
C
= 8 W.
= 25˚C)
Symbol
Min.
-3.8
120
1.7
I
V
T
www.cree.com/products/wireless_appnotes.asp
–
–
–
–
–
–
–
–
R
V
GMAX
T
T
T
DSS
STG
GS
θJC
S
C
J
Typ.
-3.3
-3.0
2.1
2.7
0.8
0.1
12
65
–
8
–
Max.
-2.3
TBD
–
–
–
–
–
–
–
–
–
-65, +150
-40, +150
-10, +2
Rating
10.1
TBD
225
2.1
84
Units
V
V
V
dB
%
pF
pF
pF
W
Y
A
DC
DC
DC
Conditions
V
V
V
V
V
V
V
No damage at all phase angles,
V
P
V
V
V
IN
DS
DS
DS
GS
DD
DD
DD
DD
DS
DS
DS
= 32 dBm
= 10 V, I
= 28 V, I
= 6.0 V, V
= -8 V, I
= 28 V, I
= 28 V, I
= 28 V, I
= 28 V, I
= 28 V, V
= 28 V, V
= 28 V, V
D
D
D
DQ
DQ
DQ
DQ
gs
gs
gs
GS
= 2.1 mA
= 2.1 mA
= 100 mA
= -8 V, f = 1 MHz
= -8 V, f = 1 MHz
= -8 V, f = 1 MHz
= 100 mA
= 100 mA
= 100 mA, P
= 100 mA,
= 2.0 V
USA Tel: [phone]
Units
˚C/W
Volts
Volts
www.cree.com/wireless
mA
˚C
˚C
˚C
˚C
Fax: [phone]
Durham, NC 27703
4600 Silicon Drive
IN
= 32 dBm
Cree, Inc.