CGH40006S Cree Inc, CGH40006S Datasheet - Page 9

• Manufacturer Part Number: CGH40006S
• Description: FET RF HEMT 6GHZ 28V 3X3QFN
• Manufacturer: Cree Inc

Specifications of CGH40006S

• Voltage - Rated: 84V
• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 12dB
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 8W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Package / Case: -
• Other names: CGH40006STR

CGH40006S CW Power Dissipation De-rating Curve
Source and Load Impedances
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
9
CGH40006S Rev 1.0 Preliminary
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Note 1. V
Note 2. Optimized for power gain, P
Note 3. When using this device at low frequency, series resistors should
be used to maintain amplifier stability.
Note 4. 35 pH source inductance is assumed between the package and
RF ground (20 mil thick PCB).
Frequency (MHz)
10
9
8
7
6
5
4
3
2
1
0
0
DD
1000
2000
3000
4000
5000
6000
= 28V, I
Z Source
Power Dissipation derating Curve vs max Tcase
50
DQ
= 100mA in the 440203 package.
G
Maximum Case Temperature (°C)
100
1.94 - j21.35
12.7 + j20.2
5.98 + j6.81
3.32 - j2.89
2.38 - j9.45
2.62 - j15.6
Z Source
SAT
and PAE.
D
S
150
Z Load
200
32.7 + j32.9
19.2 + j29.8
15.2 + j15.7
8.51 + j2.07
9.98 + j9.6
62.3 + j42
Z Load
Note 1
250
USA Tel: [phone]
www.cree.com/wireless
Fax: [phone]
Durham, NC 27703
4600 Silicon Drive
Cree, Inc.