CGH40006S Cree Inc, CGH40006S Datasheet - Page 7

• Manufacturer Part Number: CGH40006S
• Description: FET RF HEMT 6GHZ 28V 3X3QFN
• Manufacturer: Cree Inc

Specifications of CGH40006S

• Voltage - Rated: 84V
• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 12dB
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 8W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Package / Case: -
• Other names: CGH40006STR

Typical Performance
Electrostatic Discharge (ESD) Classifications
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
Parameter
Human Body Model
Charge Device Model
7
CGH40006S Rev 1.0 Preliminary
as a Function of Frequency of the CGH40006S in the CGH40006S-TB
Third Order Intermodulation Distortion vs Total Output Power
-10
-20
-30
-40
-50
-60
0
20
21
22
23
Symbol
24
HBM
CDM
V
DD
25
IM3 vs Total output power
= 28 V, I
26
Output Power (dBm)
27
28
DQ
29
= 60 mA
30
1A > 250 V
1 < 200 V
31
Class
32
2.0 GHz
3.0 GHz
4.0 GHz
5.0 GHz
6.0 GHz
33
34
35
36
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
37
Test Methodology
USA Tel: [phone]
www.cree.com/wireless
Fax: [phone]
Durham, NC 27703
4600 Silicon Drive
Cree, Inc.