CGH40006S Cree Inc, CGH40006S Datasheet - Page 6

• Manufacturer Part Number: CGH40006S
• Description: FET RF HEMT 6GHZ 28V 3X3QFN
• Manufacturer: Cree Inc

Specifications of CGH40006S

• Voltage - Rated: 84V
• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 12dB
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 8W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Package / Case: -
• Other names: CGH40006STR

Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
Typical Performance
6
CGH40006S Rev 1.0 Preliminary
in the CGH40006S-TB at P
in the CGH40006S-TB at P
in the CGH40006S-TB at P
Drain Efficiency vs Frequency of the CGH40006S
Output Power vs Frequency of the CGH40006S
70%
60%
50%
40%
30%
20%
10%
Power Gain vs Frequency of the CGH40006S
10
12
10
0%
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
2.0
2.0
2.0
2.5
2.5
2.5
3.0
3.0
3.0
Drain efficiency @ Pin 32 dBm
Power (w) @ Pin 32 dBm
Gain @ Pin 32 dBm
3.5
3.5
3.5
Frequency (GHz)
Frequency (GHz)
Frequency (GHz)
4.0
4.0
4.0
IN
IN
IN
= 32 dBm, V
= 32 dBm, V
= 32 dBm, V
4.5
4.5
4.5
5.0
5.0
5.0
DD
DD
DD
5.5
5.5
5.5
= 28 V
= 28 V
= 28 V
6.0
6.0
6.0
USA Tel: [phone]
www.cree.com/wireless
Fax: [phone]
Durham, NC 27703
4600 Silicon Drive
Cree, Inc.