MMBZ15VDL NXP Semiconductors, MMBZ15VDL Datasheet - Page 10

• Manufacturer Part Number: MMBZ15VDL
• Description: DIODE,DUAL TVS,UNI DIR,40W,12V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ15VDL

• Reverse Stand-off Voltage Vrwm: 12.8V
• Breakdown Voltage Range: 14.3V To 15.8V
• Clamping Voltage Vc Max: 21.2V
• Diode Configuration: Common Cathode
• Peak Pulse Current Ippm: 1.9A
• Diode Case: RoHS Compliant

NXP Semiconductors
8. Application information
9. Test information
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
9.1 Quality information
The MMBZxVCL series and the MMBZxVDL series are designed for the protection of up
to two unidirectional data or signal lines from the damage caused by ESD and surge
pulses. The devices may be used on lines where the signal polarities are either positive or
negative with respect to ground. The devices provide a surge capability of 40 W per line
for a 10/1000 s waveform.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is
suitable for use in automotive applications.
1. Place the devices as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
Fig 9.
ground loops.
vias.
Typical application: ESD and transient voltage protection of data lines
Double ESD protection diodes for transient overvoltage suppression
unidirectional protection
Rev. 01 — 3 September 2008
MMBZxVCL; MMBZxVDL series
of two lines
line 1 to be protected
line 2 to be protected
MMBZxVCL/VDL
GND
bidirectional protection
of one line
MMBZxVCL/VDL
line 1 to be protected
GND
006aab330
© NXP B.V. 2008. All rights reserved.
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