MMBZ15VDL NXP Semiconductors, MMBZ15VDL Datasheet - Page 4

• Manufacturer Part Number: MMBZ15VDL
• Description: DIODE,DUAL TVS,UNI DIR,40W,12V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ15VDL

• Reverse Stand-off Voltage Vrwm: 12.8V
• Breakdown Voltage Range: 14.3V To 15.8V
• Clamping Voltage Vc Max: 21.2V
• Diode Configuration: Common Cathode
• Peak Pulse Current Ippm: 1.9A
• Diode Case: RoHS Compliant

NXP Semiconductors
5. Limiting values
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
Table 7.
T
[1]
[2]
Symbol
Per diode
P
I
Per device
P
T
T
T
Symbol
Per diode
V
PPM
amb
j
amb
stg
PPM
tot
ESD
In accordance with IEC 61643-321 (10/1000 s current waveform).
Measured from pin 1 or 2 to pin 3.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 or 2 to pin 3.
= 25 C unless otherwise specified.
Parameter
electrostatic discharge voltage
Limiting values
ESD maximum ratings
Parameter
rated peak pulse power
rated peak pulse current
total power dissipation
junction temperature
ambient temperature
storage temperature
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
Double ESD protection diodes for transient overvoltage suppression
Rev. 01 — 3 September 2008
MMBZxVCL; MMBZxVDL series
Conditions
t
t
T
p
p
amb
= 10/1000 s
= 10/1000 s
Conditions
IEC 61000-4-2
(contact discharge)
machine model
25 C
[1][2]
[1][2]
[3]
[4]
Min
-
-
-
-
-
-
-
-
-
-
55
65
[1][2]
Min
-
-
© NXP B.V. 2008. All rights reserved.
Max
40
2.35
1.9
1.6
1.4
1
0.87
350
440
150
+150
+150
Max
30
2
Unit
W
A
A
A
A
A
A
mW
mW
2
C
C
C
.
Unit
kV
kV
4 of 15