MMBZ15VDL NXP Semiconductors, MMBZ15VDL Datasheet - Page 6

• Manufacturer Part Number: MMBZ15VDL
• Description: DIODE,DUAL TVS,UNI DIR,40W,12V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ15VDL

• Reverse Stand-off Voltage Vrwm: 12.8V
• Breakdown Voltage Range: 14.3V To 15.8V
• Clamping Voltage Vc Max: 21.2V
• Diode Configuration: Common Cathode
• Peak Pulse Current Ippm: 1.9A
• Diode Case: RoHS Compliant

NXP Semiconductors
7. Characteristics
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
Table 10.
T
Symbol Parameter
Per diode
V
V
I
RM
amb
F
RWM
= 25 C unless otherwise specified.
forward voltage
reverse standoff
voltage
reverse leakage current
Characteristics
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
Double ESD protection diodes for transient overvoltage suppression
Rev. 01 — 3 September 2008
MMBZxVCL; MMBZxVDL series
Conditions
I
I
I
I
I
I
V
V
V
V
V
V
F
F
F
F
F
F
RWM
RWM
RWM
RWM
RWM
RWM
= 10 mA
= 10 mA
= 10 mA
= 10 mA
= 200 mA
= 10 mA
= 8.5 V
= 12.8 V
= 14.5 V
= 17 V
= 22 V
= 26 V
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.1
0.1
0.1
© NXP B.V. 2008. All rights reserved.
Max
0.9
0.9
0.9
0.9
1.1
0.9
8.5
12.8
14.5
17
22
26
5
5
5
5
5
5
Unit
V
V
V
V
V
V
V
V
V
V
V
V
nA
nA
nA
nA
nA
nA
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