MMBZ15VDL NXP Semiconductors, MMBZ15VDL Datasheet - Page 9

• Manufacturer Part Number: MMBZ15VDL
• Description: DIODE,DUAL TVS,UNI DIR,40W,12V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ15VDL

• Reverse Stand-off Voltage Vrwm: 12.8V
• Breakdown Voltage Range: 14.3V To 15.8V
• Clamping Voltage Vc Max: 21.2V
• Diode Configuration: Common Cathode
• Peak Pulse Current Ippm: 1.9A
• Diode Case: RoHS Compliant

NXP Semiconductors
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
Fig 5.
Fig 7.
(pF)
C
(1) MMBZ15VDL: unidirectional
(2) MMBZ15VDL: bidirectional
(3) MMBZ27VCL: unidirectional
(4) MMBZ27VCL: bidirectional
100
d
V
80
60
40
20
0
CL
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
V-I characteristics for a unidirectional
ESD protection diode
V
BR
V
5
RWM
amb
P-N
= 25 C
10
+
15
(1)
I
(2)
I
I
I
I
RM
R
PPM
PP
(3)
(4)
20
Double ESD protection diodes for transient overvoltage suppression
006aab328
V
R
(V)
006aab324
Rev. 01 — 3 September 2008
MMBZxVCL; MMBZxVDL series
25
V
Fig 6.
Fig 8.
V
(nA)
I
RM
CL
10
10
10
10
10
1
2
V
1
2
3
MMBZ27VCL: V
Reverse leakage current as a function of
junction temperature; typical values
V-I characteristics for a bidirectional
ESD protection diode
75
BR
V
RWM
25
RWM
25
I
I
PPM
PP
I
RM
= 22 V
I
R
I
I
I
I
RM
R
PP
PPM
75
© NXP B.V. 2008. All rights reserved.
125
T
006aab329
amb
V
RWM
( C)
+
175
006aab325
V
BR
9 of 15
V
CL