MMBZ15VDL NXP Semiconductors, MMBZ15VDL Datasheet - Page 8

• Manufacturer Part Number: MMBZ15VDL
• Description: DIODE,DUAL TVS,UNI DIR,40W,12V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ15VDL

• Reverse Stand-off Voltage Vrwm: 12.8V
• Breakdown Voltage Range: 14.3V To 15.8V
• Clamping Voltage Vc Max: 21.2V
• Diode Configuration: Common Cathode
• Peak Pulse Current Ippm: 1.9A
• Diode Case: RoHS Compliant

NXP Semiconductors
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
Fig 3.
P
(W)
PPM
10
10
10
1
3
2
10
MMBZ27VCL: unidirectional and bidirectional
T
Rated peak pulse power as a function of
exponential pulse duration (rectangular
waveform); typical values
amb
2
= 25 C
10
1
Table 10.
T
[1]
[2]
Symbol Parameter
S
amb
1
Z
In accordance with IEC 61643-321 (10/1000 s current waveform).
Measured from pin 1 or 2 to pin 3.
= 25 C unless otherwise specified.
10
temperature coefficient I
Characteristics
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
10
Double ESD protection diodes for transient overvoltage suppression
2
006aab327
t
p
(ms)
Rev. 01 — 3 September 2008
MMBZxVCL; MMBZxVDL series
10
3
…continued
Conditions
Z
= 1 mA
Fig 4.
P
PPM(25 C)
P
PPM
1.2
0.8
0.4
0
0
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
50
Min
-
-
-
-
-
-
100
Typ
8.1
11
14
15.8
23
29.4
150
© NXP B.V. 2008. All rights reserved.
T
006aab321
Max
-
-
-
-
-
-
j
( C)
200
Unit
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
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