IXA55I1200HJ IXYS SEMICONDUCTOR, IXA55I1200HJ Datasheet - Page 4

• Manufacturer Part Number: IXA55I1200HJ
• Description: IGBT,1200V,84A,ISOPLUS247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA55I1200HJ

• Transistor Type: IGBT
• Dc Collector Current: 84A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 290W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: ISOPLUS-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 290W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
[A]
[A]
[mJ]
I
I
C
C
E
100
100
80
60
40
20
80
60
40
20
10
0
0
8
6
4
2
0
0
5
0
Fig. 3 Typ. tranfer characteristics
Fig. 5 Typ. switching energy vs. collector current
Fig. 1 Typ. output characteristics
V
R
V
V
T
GE
VJ
G
CE
GE
T
6
VJ
=
= 15 V
= 125°C
20
= 600 V
= ±15 V
= 125°C
15
7
T
1
VJ
40
= 25°C
8
V
T
V
CE
VJ
I
GE
C
60
= 25°C
9
[V]
[A]
[V]
2
T
10 11 12 13
VJ
80
= 125°C
100
3
E
E
on
off
120
Data according to IEC 60747and per diode unless otherwise specified
[mJ]
V
[V]
E
[A]
GE
I
C
100
6.0
5.5
5.0
4.5
4.0
80
60
40
20
20
15
10
Fig. 6 Typ. switching energy vs. gate resistance
0
5
0
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
T
12
VJ
I
V
C
CE
= 125°C
40
= 50 A
= 600 V
E
E
1
off
on
V
16
GE
80
= 15 V
17 V
19 V
IXA55I1200HJ
20
R
2
Q
120
G
V
G
CE
[ ]
[nC]
[V]
24
160
3
I
V
V
T
C
VJ
CE
GE
13 V
=
= 125°C
= 600 V
= ±15 V
preliminary
28
200
50 A
4
20090409
11 V
9 V
240
32