IXA55I1200HJ IXYS SEMICONDUCTOR, IXA55I1200HJ Datasheet - Page 5

• Manufacturer Part Number: IXA55I1200HJ
• Description: IGBT,1200V,84A,ISOPLUS247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA55I1200HJ

• Transistor Type: IGBT
• Dc Collector Current: 84A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 290W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: ISOPLUS-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 290W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXA55I1200HJ
preliminary
1
Z
thJC
0.1
[K/W]
0.01
0.001
0.01
0.1
1
10
t
[s]
p
Fig. 8 Typ. transient thermal impedance
IXYS reserves the right to change limits, conditions and dimensions.
20090409
Data according to IEC 60747and per diode unless otherwise specified
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