IXGH30N60C3C1 IXYS SEMICONDUCTOR, IXGH30N60C3C1 Datasheet - Page 3
IXGH30N60C3C1
Manufacturer Part Number
IXGH30N60C3C1
Description
IGBT,600V,30A,TO-247
Manufacturer
IXYS SEMICONDUCTOR
Specifications of IXGH30N60C3C1
Transistor Type
IGBT
Dc Collector Current
60A
Collector Emitter Voltage Vces
3V
Power Dissipation Max
220W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
TO-247
Rohs Compliant
Yes
Power Dissipation Pd
220W
© 2009 IXYS CORPORATION, All Rights Reserved
TO-220 (IXGP) Outline
TO-263 (IXGA) Outline
TO-247 (IXTH) Outline
Pins:
Terminals: 1 - Gate
1 - Gate
3 - Source
1
2
3
2 - Drain
4 - Drain
e
2 - Drain
∅ P
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
1
2
1
2
20.80
15.75
19.81
Min.
1.65
2.87
5.20
3.55
5.89
4.32
Millimeter
4.7
2.2
2.2
1.0
.4
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1