IXGH30N60C3C1 IXYS SEMICONDUCTOR, IXGH30N60C3C1 Datasheet - Page 5

• Manufacturer Part Number: IXGH30N60C3C1
• Description: IGBT,600V,30A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGH30N60C3C1

• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 3V
• Power Dissipation Max: 220W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 220W

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10,000
1,000
1.00
0.10
0.01
100
24
20
16
12
10
0.00001
8
4
0
0
0
f
= 1 MHz
10
5
20
10
Fig. 7. Transconductance
0.0001
Fig. 9. Capacitance
30
15
T
J
= - 40ºC
I
V
C
CE
- Amperes
40
20
- Volts
25ºC
125ºC
50
25
Fig. 11. Maximum Transient Thermal Impedance for IGBT
C oes
C ies
C res
0.001
60
30
70
35
Pulse Width - Seconds
40
80
0.01
16
14
12
10
70
60
50
40
30
20
10
8
6
4
2
0
0
IXGA30N60C3C1 IXGP30N60C3C1
100
0
V
I
I
150
C
G
CE
T
R
dV / dt < 10V / ns
= 20A
= 10 mA
J
G
= 300V
= 125ºC
5
= 5Ω
Fig. 10. Reverse-Bias Safe Operating Area
200
10
0.1
250
300
Fig. 8. Gate Charge
Q
15
G
- NanoCoulombs
V
350
CE
20
- Volts
IXGH30N60C3C1
400
1
25
450
500
30
IXYS REF: G_30N60C3C1(4D)6-03-09
550
35
600
10
650
40