IXGP20N120A3 IXYS SEMICONDUCTOR, IXGP20N120A3 Datasheet - Page 3

• Manufacturer Part Number: IXGP20N120A3
• Description: IGBT,1200V,20A,TO-220AB
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGP20N120A3

• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Max: 180W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes
• Power Dissipation Pd: 180W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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7.5
6.5
5.5
4.5
3.5
2.5
1.5
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0.0
0.0
5
10A
0.4
0.4
6
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.8
7
Fig. 5. Collector-to-Emitter Voltage
0.8
20A
vs. Gate-to-Emitter Voltage
1.2
8
1.2
1.6
V
9
CE
1.6
V
V
I
CE
GE
- Volts
C
2.0
= 40A
10
- Volts
- Volts
2.0
2.4
V
11
GE
V
= 15V
GE
2.4
13V
11V
2.8
= 15V
12
13V
11V
J
J
= 125ºC
= 25ºC
2.8
T
3.2
J
13
= 25ºC
9V
7V
5V
9V
7V
5V
3.2
3.6
14
3.6
4.0
15
140
120
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
45
40
35
30
25
20
15
10
0
5
0
-50
4.0
0
V
IXGA20N120A3 IXGP20N120A3
Fig. 2. Extended Output Characteristics @ T
GE
4.5
= 15V
-25
4
5.0
Fig. 4. Dependence of V
0
8
5.5
Fig. 6. Input Admittance
Junction Temperature
T
J
12
25
- Degrees Centigrade
6.0
V
CE
V
GE
- Volts
16
50
6.5
- Volts
IXGH20N120A3
I
I
7.0
I
C
C
C
20
75
= 20A
= 10A
= 40A
T
CE(sat)
V
J
GE
= - 40ºC
7.5
125ºC
= 15V
25ºC
100
24
13V
on
8.0
11V
J
= 25ºC
125
28
9V
8.5
7V
150
32
9.0