IXGP20N120A3 IXYS SEMICONDUCTOR, IXGP20N120A3 Datasheet - Page 6

• Manufacturer Part Number: IXGP20N120A3
• Description: IGBT,1200V,20A,TO-220AB
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGP20N120A3

• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Max: 180W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes
• Power Dissipation Pd: 180W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
200
180
160
140
120
100
160
140
120
100
80
60
40
20
80
60
40
20
0
10
25
t
R
V
t
T
V
r i
CE
G
35
r i
Fig. 20. Inductive Turn-on Switching Times
J
CE
Fig. 18. Inductive Turn-on Switching Times
= 10Ω , V
= 125ºC, V
15
= 960V
= 960V
45
20
GE
I
t
d(on)
GE
C
vs. Junction Temperature
t
= 15V
d(on)
= 40A
55
= 15V
T
vs. Gate Resistance
- - - -
J
- - - -
25
- Degrees Centigrade
R
65
G
- Ohms
30
75
I
I
85
C
C
35
I
= 40A
= 20A
C
= 20A
95
40
105
45
115
125
50
55
50
45
40
35
30
25
20
15
10
5
28
26
24
22
20
18
16
14
160
140
120
100
80
60
40
20
0
20
T
22
t
R
V
J
IXGA20N120A3 IXGP20N120A3
Fig. 19. Inductive Turn-on Switching Times
r i
G
CE
= 125ºC
= 10Ω , V
= 960V
24
t
GE
d(on)
26
= 15V
vs. Collector Current
- - - -
28
I
C
30
- Amperes
32
IXGH20N120A3
34
T
J
= 25ºC
36
IXYS REF: G_20N120A3(4L)10-01-08
38
40
23
22
21
20
19
18
17
16
15