GT50J325 Toshiba, GT50J325 Datasheet - Page 2

• Manufacturer Part Number: GT50J325
• Description: IGBT, 600V, TO-3P(LH)
• Manufacturer: Toshiba

Specifications of GT50J325

• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.45V
• Power Dissipation Max: 240W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Power Dissipation Pd: 240W
• Rohs Compliant: Yes

Electrical Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Switching loss
Peak forward voltage
Reverse recovery time
Note 1: Switching time measurement circuit and input/output waveforms
Note 2: Switching loss measurement waveforms
-V
0
0
GE
Characteristics
V
V
I
GE
CE
C
R
Turn-on delay time
Rise time
Turn-on time
Turn-off delay time
Fall time
Turn-off time
Turn-on switching
loss
Turn-off switching
loss
G
I
C
90%
E
L
off
V
CE
V
CC
(Ta = = = = 25°C)
V
V
Symbol
GE (OFF)
CE (sat)
t
t
I
I
d (on)
d (off)
C
E
E
GES
CES
t
t
V
t
on
off
t
t
ies
on
off
rr
r
f
F
10%
0
0
V
V
I
I
V
Inductive load
V
V
I
I
C
C
F
F
GE
CE
CE
CC
GG
= 50 A, V
= 50 A, di/dt = -100 A/ms
= 5 mA, V
= 50 A, V
V
V
I
E
GE
CE
= ±20 V, V
= 600 V, V
= 10 V, V
= 300 V, I
C
= +15 V, R
on
2
t
GE
GE
10%
d (off)
Test Condition
CE
GE
5%
C
= 0
CE
GE
= 15 V
= 5 V
G
= 50 A
= 0, f = 1 MHz
= 13 W
= 0
= 0
90%
t
off
t
f
90%
10%
(Note 1)
(Note 2)
10%
10%
t
Min
3.5
d (on)
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
7900
Typ.
0.09
0.07
0.24
0.30
0.05
0.43
1.30
1.34
2.0
t
65
t
¾
¾
¾
¾
on
r
90%
GT50J325
±500
2.45
Max
10%
1.0
6.5
4.2
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Unit
mA
mJ
nA
pF
ms
ns
V
V
V