GT50J325 Toshiba, GT50J325 Datasheet - Page 6

• Manufacturer Part Number: GT50J325
• Description: IGBT, 600V, TO-3P(LH)
• Manufacturer: Toshiba

Specifications of GT50J325

• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.45V
• Power Dissipation Max: 240W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Power Dissipation Pd: 240W
• Rohs Compliant: Yes

10
10
10
10
10
10
10
- 1
- 2
- 3
- 4
2
1
0
10
- 5
Tc = 25°C
10
- 4
10
- 3
Pulse width t
10
r
th
- 2
(t) – t
10
- 1
w
w
IGBT
FRD
(s)
10
0
10
1
10
2
6
GT50J325