GT50J325 Toshiba, GT50J325 Datasheet - Page 6
GT50J325
Manufacturer Part Number
GT50J325
Description
IGBT, 600V, TO-3P(LH)
Manufacturer
Toshiba
Datasheet
1.GT50J325.pdf
(8 pages)
Specifications of GT50J325
Transistor Type
IGBT
Dc Collector Current
50A
Collector Emitter Voltage Vces
2.45V
Power Dissipation Max
240W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Power Dissipation Pd
240W
Rohs Compliant
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GT50J325
Manufacturer:
TOHSIBA
Quantity:
9 800
10
10
10
10
10
10
10
- 1
- 2
- 3
- 4
2
1
0
10
- 5
Tc = 25°C
10
- 4
10
- 3
Pulse width t
10
r
th
- 2
(t) – t
10
- 1
w
w
IGBT
FRD
(s)
10
0
10
1
10
2
6
GT50J325