GT50J325 Toshiba, GT50J325 Datasheet - Page 5
GT50J325
Manufacturer Part Number
GT50J325
Description
IGBT, 600V, TO-3P(LH)
Manufacturer
Toshiba
Datasheet
1.GT50J325.pdf
(8 pages)
Specifications of GT50J325
Transistor Type
IGBT
Dc Collector Current
50A
Collector Emitter Voltage Vces
2.45V
Power Dissipation Max
240W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Power Dissipation Pd
240W
Rohs Compliant
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GT50J325
Manufacturer:
TOHSIBA
Quantity:
9 800
30000
10000
3000
1000
300
100
100
300
100
0.3
0.1
30
10
80
60
40
20
30
10
0.1
0
3
1
0
1
Common collector
V GE = 0
Common emitter
V GE = 0
f = 1 MHz
Tc = 25°C
*: Single pulse
Curves must be
derated linearly with
increase in
temperature.
I C max (pulse)*
I C max (continuous)
Tc = 25°C
0.3
DC operation
Collector-emitter voltage V
Collector-emitter voltage V
3
Tc = 125°C
1
1
Forward voltage V
Safe operating area
10
3
2
C – V
I
F
– V
30
10
25
CE
F
3
30
-40
F
100
10 ms*
CE
CE
C res
(V)
1 ms*
100
100 ms*
C oes
C ies
4
(V)
300
(V)
300
50 ms*
1000
1000
5
5
500
400
300
200
100
100
300
100
0.3
0.1
0.3
0.1
30
10
30
10
0
3
1
3
1
0
0
1
Common emitter
R L = 6 W
Tc = 25°C
Common collector
di/dt = -100 A/ms
V GE = 0
T j < = 125°C
V GE = 15 V
R G = 13 W
I rr
t rr
3
Collector-emitter voltage V
: Tc = 25°C
: Tc = 125°C
10
100
300
Forward current I
Gate charge Q
Reverse bias SOA
10
V
V CE = 100 V
CE
200
20
t
rr
, V
, I
200
30
rr
GE
– I
– Q
G
F
30
F
100
G
(nC)
(A)
CE
300
40
300
(V)
GT50J325
1000
400
50
20
16
12
8
4
0
10000
3000
1000
300
100
30
10