GT50J325 Toshiba, GT50J325 Datasheet - Page 3

• Manufacturer Part Number: GT50J325
• Description: IGBT, 600V, TO-3P(LH)
• Manufacturer: Toshiba

Specifications of GT50J325

• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.45V
• Power Dissipation Max: 240W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Power Dissipation Pd: 240W
• Rohs Compliant: Yes

100
100
80
60
40
20
20
16
12
80
60
40
20
0
8
4
0
0
0
0
0
Common emitter
Tc = 25°C
Common emitter
V CE = 5 V
Tc = 125°C
Collector-emitter voltage V
I C = 10 A
Gate-emitter voltage V
25
Gate-emitter voltage V
1
4
4
30
V
2
8
8
I
I
20
CE
C
C
-40
– V
– V
– V
100
50
GE
CE
15
GE
12
12
3
GE
GE
CE
10
Common emitter
Tc = 25°C
(V)
(V)
V GE = 7 V
16
16
4
(V)
8
20
20
5
3
20
16
12
20
16
12
-60
8
4
0
8
4
0
5
4
3
2
1
0
0
0
Common emitter
V GE = 15 V
I C = 10 A
I C = 10 A
-20
Gate-emitter voltage V
Gate-emitter voltage V
4
4
Case temperature Tc (°C)
30
30
V
V
V
20
CE (sat)
8
8
CE
CE
– V
– V
100
100
50
50
– Tc
GE
GE
12
12
60
GE
GE
Common emitter
Tc = -40°C
Common emitter
Tc = 125°C
(V)
(V)
100
16
16
I C = 10 A
GT50J325
100
70
50
30
140
20
20