GT50J325 Toshiba, GT50J325 Datasheet - Page 4

• Manufacturer Part Number: GT50J325
• Description: IGBT, 600V, TO-3P(LH)
• Manufacturer: Toshiba

Specifications of GT50J325

• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.45V
• Power Dissipation Max: 240W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Power Dissipation Pd: 240W
• Rohs Compliant: Yes

0.03
0.01
0.03
0.01
0.3
0.1
0.3
0.1
0.3
0.1
10
10
30
10
3
1
3
1
3
1
1
1
1
Common emitter
V CC = 300 V
V GG = 15 V
I C = 50 A
Common emitter
V CC = 300 V
V GG = 15 V
I C = 50 A
Common emitter
V CC = 300 V
V GG = 15 V
I C = 50 A
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
Switching time t
Switching time t
t d (off)
3
3
3
Switching loss E
E off
(Note 1)
(Note 1)
t off
(Note 2)
t f
t r
Gate resistance R
Gate resistance R
Gate resistance R
t on
10
10
10
E on
30
30
30
on
off
, t
t d (on)
, t
on
r
f
, t
, t
, E
G
G
G
100
100
100
d (off)
d (on)
off
(
(9)
(9)
W
– R
)
– R
– R
300
300
300
G
G
G
1000
1000
1000
4
0.03
0.01
0.03
0.01
0.3
0.1
0.3
0.1
0.3
0.1
10
10
10
3
1
3
1
3
1
0
0
0
Common emitter
V CC = 300 V
V GG = 15 V
R G = 13 W
Common emitter
V CC = 300 V
V GG = 15 V
R G = 13 W
Common emitter
V CC = 300 V
V GG = 15 V
R G = 13 W
t d (on)
t d (off)
E off
t on
: Tc = 25°C
: Tc = 125°C
t r
t f
Switching time t
Switching time t
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
Switching loss E
10
10
10
(Note 2)
Collector current I
Collector current I
Collector current I
(Note 1)
(Note 1)
20
20
20
t off
on
off
, t
, t
on
30
30
30
r
f
, t
, t
, E
C
C
C
d (on)
d (off)
off
(A)
(A)
(A)
– I
40
40
40
– I
– I
C
C
C
GT50J325
E on
50
50
50