IXGR40N60C2 IXYS SEMICONDUCTOR, IXGR40N60C2 Datasheet - Page 4

• Manufacturer Part Number: IXGR40N60C2
• Description: IGBT, ISOPLUS247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGR40N60C2

• Transistor Type: IGBT
• Dc Collector Current: 56A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Max: 170W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Power Dissipation Pd: 170W
• Rohs Compliant: Yes

IXYS reserves the right to change limits, test conditions, and dimensions.
0.8
0.6
0.4
0.2
1 .6
1 .4
1 .2
70
60
50
40
30
20
1 0
1 5
1 2
0
0
9
6
3
0
1
1 0
0
0
T
R
R
V
V
J
G
G
V
I
I
= -40
G E
C E
1 25
= 1 0 Ohms - - - - -
C
G
= 3 Ohms
C E
= 30A
= 1 0mA
25
= 1 5V
= 400V
= 300V
30
º
Fig. 9. Dependence of E
º
º
Fig. 7. Transconductance
C
20
C
20
C
T
J
Fig. 11. Gate Charge
= 1 25
Q
60
G
I
º
I
C
C
- nanoCoulombs
30
40
C
- Amperes
- Amperes
T
90
J
= 25
40
60
º
C
1 20
off
on I
50
80
c
1 50
1 00
1 80
60
1 0000
1 000
1 00
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
1 .8
1 .6
1 .4
1 .2
1 .6
1 .4
1 .2
1 0
0
0
1
1
25
2
0
Fig. 10. Dependence of E
V
V
T
V
V
R
R
G E
C E
f = 1 M Hz
J
G E
C E
G
G
= 1 25
= 1 0 Ohms - - - - -
= 3 Ohms
5
= 1 5V
= 400V
= 1 5V
= 400V
Fig. 8. Dependence of E
4
º
Fig. 12. Capacitance
C
T
50
1 0
J
6
- Degrees Centigrade
1 5
R
V
C E
8
G
IXGR 40N60C2D1
- Ohms
20
- Volts
75
IXGR 40N60C2
off
1 0
on Temperature
25
off
on R
1 2
I
I
30
I
I
1 00
C
C
C
C
C ies
C oes
C res
= 45A
= 1 5A
= 60A
= 30A
I
I
G
I
I
C
C
C
C
= 1 5A
1 4
= 60A
= 45A
= 30A
35
40
1 25
1 6