IXGR40N60C2 IXYS SEMICONDUCTOR, IXGR40N60C2 Datasheet - Page 5

• Manufacturer Part Number: IXGR40N60C2
• Description: IGBT, ISOPLUS247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGR40N60C2

• Transistor Type: IGBT
• Dc Collector Current: 56A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Max: 170W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Power Dissipation Pd: 170W
• Rohs Compliant: Yes

IXGR 40N60C2
IXGR 40N60C2D1
Fig. 13. Maximum Transient Thermal Resistance
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
1 0
1 00
1 000
Pulse Width - milliseconds
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