IXFH6N100 IXYS SEMICONDUCTOR, IXFH6N100 Datasheet

IXFH6N100

Manufacturer Part Number

IXFH6N100

Description

MOSFET, N, TO-247

Manufacturer

IXYS SEMICONDUCTOR

Datasheet

1.IXFH6N100.pdf (4 pages)

Specifications of IXFH6N100

Transistor Polarity

N Channel

Continuous Drain Current Id

Drain Source Voltage Vds

1kV

On Resistance Rds(on)

2ohm

Rds(on) Test Voltage Vgs

10V

Voltage Vgs Max

20V

Operating Temperature Range

-55Â°C To

Threshold Voltage Vgs Typ

4.5V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFH6N100

Manufacturer:

IXYS

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFH6N100

Manufacturer:

IXYS

Quantity:

35 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

IXFH6N100

Manufacturer:

IXYS/艾赛斯

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFH6N100F

Manufacturer:

IXYS

Quantity:

15 500

Current page: 1 of 4
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Symbol

dv/dt

Weight

N-Channel Enhancement Mode

High dv/dt, Low t

Symbol

IXYS reserves the right to change limits, test conditions, and dimensions.

D25

GSS

DSS

HiPerFET

Power MOSFETs

stg

DSS

DGR

GSM

DSS

GS(th)

DS(on)

Test Conditions

Continuous

Transient

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

Test Conditions

Pulse test, t £ 300 ms, duty cycle d £ 2 %

£ 150°C, R

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 25°C, pulse width limited by T

= 25°C

£ I

= 25°C

= 0 V, I

= V

= ±20 V

= 0.8 • V

= 0 V

= 10 V, I

, di/dt £ 100 A/ms, V

, HDMOS

, I

DSS

= 3 mA

= 2.5 mA

, V

= 0.5 • I

= 2 W

= 0

D25

= 1 MW

Family

£ V

= 25°C

= 125°C

6N100

DSS

6N90

= 25°C, unless otherwise specified)

TO-204 = 18 g, TO-247 = 6 g

6N90

6N100

IXFH/IXFM 6 N90

IXFH/IXFM 6 N100

1000

min.

900

2.0

Characteristic Values

-55 ... +150

Maximum Ratings

typ.

1.13/10

1000

900

±20

±30

180

150

300

max.

±100

250

4.5

1.8

2.0

Nm/lb.in.

V/ns

°C

Features

• International standard packages

• Low R

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

• DC choppers

• AC motor control

• Temperature and lighting controls

• Low voltage relays

Advantages

• Easy to mount with 1 screw (TO-247)

• Space savings

• High power density

TO-247 AD (IXFH)

TO-204 AA (IXFM)

G = Gate,

S = Source,

rated

- easy to drive and to protect

1000 V

power supplies

(isolated mounting screw hole)

900 V

DSS

DS (on)

£ 250 ns

HDMOS

D = Drain,

TAB = Drain

6 A

D25

process

91529E(10/95)

(TAB)

1.8 W

2.0 W

DS(on)

1 - 4

Related parts for IXFH6N100

IXFH6N100 Summary of contents

Page 1

TM HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low t , HDMOS rr Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS V Transient GSM ...

Page 2

Symbol Test Conditions 0.5 • iss MHz oss rss t d(on ...

Page 3

Fig. 1 Output Characteristics =25° Volts DS Fig vs. Drain Current DS(on) 3.0 T =25°C J 2.8 2.6 ...

Page 4

Fig.7 Gate Charge Characteristic Curve 500V 3. 10mA Gate Charge - nCoulombs Fig.9 Capacitance Curves ...

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