IXFH6N100 IXYS SEMICONDUCTOR, IXFH6N100 Datasheet - Page 4

• Manufacturer Part Number: IXFH6N100
• Description: MOSFET, N, TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXFH6N100

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 1kV
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1.000
0.100
0.010
0.001
2750
2500
2250
2000
1750
1500
1250
1000
750
500
250
0.00001
10
9
8
7
6
5
4
3
2
1
0
0
0
0
Fig.7 Gate Charge Characteristic Curve
D=0.05
Fig.9 Capacitance Curves
Fig.11 Transient Thermal Impedance
D=0.2
D=0.5
D=0.02
D=0.1
D=0.01
Single Pulse
V
I
I
D
G
DS
= 3.0A
= 10mA
10
= 500V
5
Gate Charge - nCoulombs
20
C
C
C
iss
oss
rss
30
0.0001
10
V
f = 1 MHz
V
CE
DS
40
- Volts
= 25V
15
50
60
20
0.001
70
80
25
Time - Seconds
0.01
0.1
10
1
9
8
7
6
5
4
3
2
1
0
0.0
Fig.8 Forward Bias Safe Operating Area
1
Fig.10Source Current vs. Source
Limited by R
IXFH 6N90
IXFM 6N90
0.2
0.1
T
to Drain Voltage
J
= 125°C
0.4
DS(on)
10
0.6
V
V
DS
DS
- Volts
- Volts
0.8
T
1
J
= 25°C
100
1.0
6N90 limit
6N100 limit
IXFH 6N100
IXFM 6N100
1.2
1.4
1000
10
10µs
100µs
1ms
10ms
100ms
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