PSMN027-100PS NXP Semiconductors, PSMN027-100PS Datasheet - Page 4

• Manufacturer Part Number: PSMN027-100PS
• Description: MOSFET,N CH,100V,37A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN027-100PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 21mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN027-100PS_2
Objective data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Z
(A)
(K/W)
I
th(j-mb)
10
10
D
10
10
10
10
-1
-2
−1
1
3
2
1
10
values
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
1
-6
Thermal characteristics
0.1
0.05
δ = 0.5
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
0.2
0.02
single shot
Limit R
DSon
10
-5
= V
DS
/ I
D
Conditions
see
vertical in free air
Figure 4
All information provided in this document is subject to legal disclaimers.
10
10
-4
Rev. 02 — 19 February 2010
N-channel 100V 26.8 mΩ standard level MOSFET in TO220
DC
10
-3
10
10
-2
2
t
100 μs
1 ms
10 ms
100 ms
p
= 10 μs
PSMN027-100PS
Min
-
-
10
P
V
-1
DS
Typ
0.8
60
(V)
t
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003a a e 042
003aae043
δ =
Max
1.46
-
T
t
p
t
10
1
3
Unit
K/W
K/W
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