PSMN027-100PS NXP Semiconductors, PSMN027-100PS Datasheet - Page 9

• Manufacturer Part Number: PSMN027-100PS
• Description: MOSFET,N CH,100V,37A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN027-100PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 21mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
PSMN027-100PS_2
Objective data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
10
50 V
20 V
20
(A)
I
S
40
30
20
10
30
0
V
0
All information provided in this document is subject to legal disclaimers.
Q
DS
003aae051
G
= 80 V
(nC)
Rev. 02 — 19 February 2010
40
0.3
T
j
= 175 ° C
N-channel 100V 26.8 mΩ standard level MOSFET in TO220
0.6
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
0.9
4
3
2
T
10
as a function of drain-source voltage; typical
values
j
= 25 ° C
-1
003aae052
V
SD
(V)
1.2
PSMN027-100PS
1
10
© NXP B.V. 2010. All rights reserved.
V
003aae048
DS
(V)
C
C
C
oss
iss
rss
10
2
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