PSMN027-100PS NXP Semiconductors, PSMN027-100PS Datasheet - Page 7

• Manufacturer Part Number: PSMN027-100PS
• Description: MOSFET,N CH,100V,37A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN027-100PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 21mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
PSMN027-100PS_2
Objective data sheet
Fig 7.
Fig 9.
(pF)
3000
2000
1000
(A)
C
I
D
40
30
20
10
0
0
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Input and reverse transfer capacitances as a
Output characteristics: drain current as a
0
0
0.5
10
1
5
5.5
V
V
GS
GS
1.5
(V)
(V) = 4 V
All information provided in this document is subject to legal disclaimers.
5
003aae047
003aae044
V
DS
C
C
4.5
rss
iss
(V)
Rev. 02 — 19 February 2010
10
2
N-channel 100V 26.8 mΩ standard level MOSFET in TO220
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
V
R
(mΩ)
GS(th)
(V)
DSon
120
90
60
30
5
4
3
2
1
0
0
−60
of gate-source voltage; typical values
junction temperature
Drain-source on-state resistance as a function
0
0
5
PSMN027-100PS
60
10
max
min
typ
120
15
© NXP B.V. 2010. All rights reserved.
003aae049
V
003aad280
T
j
GS
(°C)
(V)
180
20
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