PSMN027-100PS NXP Semiconductors, PSMN027-100PS Datasheet - Page 8

• Manufacturer Part Number: PSMN027-100PS
• Description: MOSFET,N CH,100V,37A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN027-100PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 21mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
PSMN027-100PS_2
Objective data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
R
(mΩ)
(A)
I
10
10
10
10
10
10
D
DSon
−1
−2
−3
−4
−5
−6
35
30
25
20
gate-source voltage
of drain current; typical values
0
0
15
2
min
typ
30
4
V
GS
max
V
All information provided in this document is subject to legal disclaimers.
GS
(V) = 5 V
I
D
003aae050
(A)
(V)
03aa35
5.5
10
6
7
Rev. 02 — 19 February 2010
45
6
N-channel 100V 26.8 mΩ standard level MOSFET in TO220
Fig 12. Normalized drain-source on-state resistance
Fig 14. Gate charge waveform definitions
a
3.2
2.4
1.6
0.8
0
factor as a function of junction temperature
-60
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
PSMN027-100PS
I
Q
D
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2010. All rights reserved.
003aad774
003aaa508
T
j
(°C)
180
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