PSMN1R7-30YL NXP Semiconductors, PSMN1R7-30YL Datasheet - Page 11

• Manufacturer Part Number: PSMN1R7-30YL
• Description: N CHANNEL MOSFET, 30V, 100A
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R7-30YL

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 100A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.29mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.7V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PSMN1R7-30YL
Product data sheet
Fig 20. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
100
(A)
I
80
60
40
20
S
0
0.0
All information provided in this document is subject to legal disclaimers.
0.2
Rev. 04 — 20 April 2010
0.4
T
j
= 150 °C
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
0.6
0.8
003aac447
25 °C
V
SD
(V)
1.0
PSMN1R7-30YL
© NXP B.V. 2010. All rights reserved.
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