PSMN1R7-30YL NXP Semiconductors, PSMN1R7-30YL Datasheet - Page 9

• Manufacturer Part Number: PSMN1R7-30YL
• Description: N CHANNEL MOSFET, 30V, 100A
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R7-30YL

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 100A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.29mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.7V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PSMN1R7-30YL
Product data sheet
Fig 12. Transfer characteristics: drain current as a
Fig 14. Sub-threshold drain current as a function of
10
10
10
10
10
10
(A)
I
(A)
D
I
80
60
40
20
-1
-2
-3
-4
-5
-6
D
0
function of gate-source voltage; typical values
gate-source voltage
0
0
1
T
j
min
= 175 °C
1
2
typ
2
T
3
j
V
= 25 °C
All information provided in this document is subject to legal disclaimers.
GS
003aab271
003aad113
V
max
GS
(V)
(V)
4
3
Rev. 04 — 20 April 2010
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
Fig 13. Source (diode forward) current as a function of
Fig 15. Gate-source threshold voltage as a function of
V
GS (th)
(V)
100
(A)
I
80
60
40
20
S
0
3
2
1
0
0.0
-60
source-drain (diode forward) voltage; typical
values
junction temperature
0.2
0
PSMN1R7-30YL
0.4
T
max
typ
min
j
= 175 °C
60
0.6
120
© NXP B.V. 2010. All rights reserved.
0.8
T
003aad114
j
003a a c982
T
= 25 °C
V
j
SD
(°C)
(V)
180
1.0
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