PSMN1R7-30YL NXP Semiconductors, PSMN1R7-30YL Datasheet - Page 5

• Manufacturer Part Number: PSMN1R7-30YL
• Description: N CHANNEL MOSFET, 30V, 100A
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R7-30YL

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 100A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.29mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.7V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN1R7-30YL
Product data sheet
Symbol
R
Fig 4.
Fig 5.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
(A)
10
I
10
10
D
10
10
-1
-2
-3
1
4
3
2
1
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
-6
δ = 0.5
Thermal characteristics
0.1
0.05
0.2
0.02
single shot
Parameter
thermal resistance
from junction to
mounting base
10
-5
Limit R
(1)
DSon
= V
DS
Conditions
see
All information provided in this document is subject to legal disclaimers.
/ I
10
D
1
-4
Figure 5
Rev. 04 — 20 April 2010
10
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
-3
DC
10
10
-2
PSMN1R7-30YL
Min
-
V
DS
P
10
(V)
-1
t
p
Typ
0.5
100 μs
1 ms
10 ms
100 ms
T
10 μs
t
p
© NXP B.V. 2010. All rights reserved.
δ =
(s)
003aad111
003aac456
t
T
Max
1.1
p
t
10
1
2
Unit
K/W
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