SUM110N04-04-T1-E3 Vishay, SUM110N04-04-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM110N04-04-T1-E3
• Description: N CHANNEL MOSFET, 40V, 85A
• Manufacturer: Vishay

Specifications of SUM110N04-04-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 85A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 250W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 71125
S-41261—Rev. C, 05-Jul-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
12000
10000
8000
6000
4000
2000
250
200
150
100
250
200
150
100
50
50
0
0
0
0
0
0
C
rss
20
V
GS
2
V
8
V
DS
DS
= 10 thru 7 V
Output Characteristics
C
− Drain-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
I
oss
Transconductance
D
40
− Drain Current (A)
Capacitance
16
4
60
C
iss
24
6
T
80
C
= −55_C
32
8
6 V
5 V
4 V
100
125_C
25_C
120
10
40
0.005
0.004
0.003
0.002
0.001
0.000
250
200
150
100
50
20
16
12
0
8
4
0
0
0
0
V
I
D
DS
= 85 A
1
20
On-Resistance vs. Drain Current
= 30 V
60
V
GS
Q
SUP/SUB85N04-04
Transfer Characteristics
g
2
− Gate-to-Source Voltage (V)
I
D
− Total Gate Charge (nC)
40
− Drain Current (A)
Gate Charge
120
V
GS
3
Vishay Siliconix
T
25_C
= 10 V
C
60
= 125_C
4
180
80
5
www.vishay.com
240
−55_C
100
6
300
120
7
3