SUM110N04-04-T1-E3 Vishay, SUM110N04-04-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SUM110N04-04-T1-E3
• Description: N CHANNEL MOSFET, 40V, 85A
• Manufacturer: Vishay

Specifications of SUM110N04-04-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 85A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 250W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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4
SUP/SUB85N04-04
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1000
2.0
1.6
1.2
0.8
0.4
0.0
100
0.00001
0.1
10
−50 −25
1
On-Resistance vs. Junction Temperature
V
I
D
GS
I
= 30 A
AV
0.0001
= 10 V
(A) @ T
T
0
Avalanche Current vs. Time
J
− Junction Temperature (_C)
25
A
= 150_C
0.001
50
t
in
(Sec)
75
I
AV
0.01
(A) @ T
100
A
125
0.1
= 25_C
150
175
1
100
10
55
51
47
43
39
35
1
0
−50 −25
I
Source-Drain Diode Forward Voltage
D
= 250 mA
V
SD
Drain Source Breakdown vs.
T
0
J
0.3
− Junction Temperature (_C)
− Source-to-Drain Voltage (V)
T
Junction Temperature
J
25
= 150_C
50
0.6
75
100
S-41261—Rev. C, 05-Jul-04
Document Number: 71125
0.9
125
T
J
= 25_C
150
175
1.2