IXA27IF1200HJ IXYS SEMICONDUCTOR, IXA27IF1200HJ Datasheet - Page 2

• Manufacturer Part Number: IXA27IF1200HJ
• Description: IGBT,1200V,43A,ISOPLUS247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA27IF1200HJ

• Transistor Type: IGBT
• Dc Collector Current: 43A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 150W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: ISOPLUS-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 150W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
I
I
V
Q
I
t
E
R
Symbol
V
R
V
R
R
R
R
R
τ
τ
τ
τ
IXYS reserves the right to change limits, conditions and dimensions.
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Diode
F25
F
RM
rr
Equivalent Circuits for Simulation
1
2
3
4
rec(off)
thJC
90
F
0
0
0
0
1
2
3
4
rr
I
V
R1
0
C1
Definition
Forward current
Forward voltage
Reverse recovery charge
Maximum reverse recovery current
Reverse recovery time
Reverse recovery losses at turn-off
Thermal resistance juntion to case
Definition
IGBT
Diode
R
0
R2
C2
R3
C3
R4
Conditions
T = 25°C
T =
I =
V =
di /dt = -
I =
C4
F
F
C
C
R
F
30
90
30
600
Data according to IEC 60747and per diode unless otherwise specified
°C
A
A
V
600
A/µs;
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
= 25°C
=
=
=
=
125
125
150
150
°C
°C
°C
°C
IXA27IF1200HJ
min.
min.
0.18
0.14
0.36
0.16
0.0025
0.03
0.03
0.08
IGBT
Ratings
Ratings
typ.
typ.
1.95
1.95
350
3.5
0.9
30
max.
max.
1.25
28.3
0.3413
0.2171
0.3475
0.2941
0.0025
0.03
0.03
0.08
2.2
1.2
1.1
Diode
42
25
55
20100623b
Unit
K/W
Unit
m
m
µC
mJ
ns
Ω
Ω
A
A
V
V
A
V
V