IXA27IF1200HJ IXYS SEMICONDUCTOR, IXA27IF1200HJ Datasheet - Page 5

• Manufacturer Part Number: IXA27IF1200HJ
• Description: IGBT,1200V,43A,ISOPLUS247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA27IF1200HJ

• Transistor Type: IGBT
• Dc Collector Current: 43A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 150W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: ISOPLUS-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 150W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
[A]
[A]
[mJ]
I
I
C
C
E
50
40
30
20
10
50
40
30
20
10
0
0
6
5
4
3
2
1
0
0
5
0
Fig. 3 Typ. tranfer characteristics
Fig. 5 Typ. switching energy vs. collector current
Fig. 1 Typ. output characteristics
V
R
V
V
T
GE
VJ
CE
GE
G
6
T
= 15 V
=
= 125°C
VJ
= 600 V
= ±15 V
10
= 125°C
39
7
1
T
VJ
8
= 25°C
20
V
T
V
CE
I
VJ
GE
C
9
= 25°C
[V]
[A]
[V]
2
30
T
10
VJ
= 125°C
11
40
3
12
E
E
off
on
13
50
Data according to IEC 60747and per diode unless otherwise specified
[mJ]
V
[V]
E
[A]
GE
I
C
50
40
30
20
10
20
15
10
Fig. 6 Typ. switching energy vs. gate resistance
4
3
2
1
0
5
0
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
T
I
V
V
T
40
C
VJ
VJ
CE
GE
I
V
=
C
CE
= 125°C
= 125°C
= 600 V
= ±15 V
20
= 25 A
= 600 V
1
25 A
60
V
GE
= 15 V
IXA27IF1200HJ
17 V
19 V
40
80
2
V
R
Q
CE
G
G
[ ]
[V]
[nC]
100
60
3
120
13 V
80
4
140
20100623b
11 V
E
9 V
E
on
off
100
5