IXGH48N60C3C1 IXYS SEMICONDUCTOR, IXGH48N60C3C1 Datasheet - Page 4

• Manufacturer Part Number: IXGH48N60C3C1
• Description: IGBT+DIODE,600V,48A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGH48N60C3C1

• Transistor Type: IGBT
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Max: 300W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 300W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
10,000
1,000
1.00
0.10
0.01
100
50
45
40
35
30
25
20
15
10
10
0.00001
5
0
0
0
f
10
= 1 MHz
5
20
30
10
Fig. 7. Transconductance
40
0.0001
Fig. 9. Capacitance
15
50
I
V
C
CE
- Amperes
60
20
- Volts
70
25
80
C ies
C oes
C res
Fig. 11. Maximum Transient Thermal Impedance
0.001
90
30
T
125ºC
J
= - 40ºC
25ºC
100
35
110
Pulse Width - Seconds
120
40
0.01
110
100
90
80
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
200
0
V
I
I
C
G
T
R
dV / dt < 10V / ns
CE
J
250
G
= 30A
= 10 mA
= 300V
= 125ºC
10
= 3Ω
Fig. 10. Reverse-Bias Safe Operating Area
300
20
0.1
350
Fig. 8. Gate Charge
Q
30
G
V
IXGH48N60C3C1
- NanoCoulombs
CE
400
- Volts
40
450
50
1
500
60
IXYS REF: G_48N60C3C1(5D)6-04-09
550
70
600
10
650
80