IXGH48N60C3C1 IXYS SEMICONDUCTOR, IXGH48N60C3C1 Datasheet - Page 6

• Manufacturer Part Number: IXGH48N60C3C1
• Description: IGBT+DIODE,600V,48A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGH48N60C3C1

• Transistor Type: IGBT
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Max: 300W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 300W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
140
120
100
1.00
0.10
0.01
0.00
100
80
60
40
20
90
80
70
60
50
40
30
20
10
0.00001
0
25
0
t
T
V
r i
J
CE
35
= 125ºC, V
Switching Times vs. Junction Temperature
= 400V
5
Switching Times vs. Gate Resistance
45
GE
Fig. 18. Inductive Turn-on
Fig. 20. Inductive Turn-on
10
t
= 15V
d(on)
55
T
J
- - - -
I
I
- Degrees Centigrade
C
C
R
65
= 60A
I
= 30A
G
15
C
- Ohms
= 60A
0.0001
75
t
R
V
20
r i
G
CE
85
= 3Ω , V
= 400V
Fig. 22. Maximum Transient Thermal Impedance for Diode
95
25
GE
= 15V
t
105
d(on)
I
C
= 30A
30
- - - -
115
0.001
125
35
26
25
24
23
22
21
20
19
18
17
Pulse Width - Seconds
80
70
60
50
40
30
20
10
120
100
80
60
40
20
50
40
30
20
10
0
0
15
0.0
t
R
V
20
r i
G
CE
0.01
0.4
Fig. 21. Forward Current vs. Forward Voltage
= 3Ω , V
Switching Times vs. Collector Current
= 400V
25
GE
0.8
Fig. 19. Inductive Turn-on
t
= 15V
d(on)
30
- - - -
1.2
35
I
IXGH48N60C3C1
C
V
- Amperes
F
- Volts
1.6
T
40
J
= 25ºC
0.1
45
2.0
T
J
= 25ºC, 125ºC
50
2.4
T
IXYS REF: G_48N60C3C1(5D)6-04-09
J
= 125ºC
55
2.8
60
27
25
23
21
19
17
15
3.2
1