GT10Q101 Toshiba, GT10Q101 Datasheet
GT10Q101
Specifications of GT10Q101
Related parts for GT10Q101
GT10Q101 Summary of contents
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... Collector current 1 ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range GT10Q101 = 2.7 V (max) Symbol Rating Unit V 1200 V CES ± GES 140 150 ° -55~150 °C stg 1 GT10Q101 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g (typ.) 2003-03-18 ...
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... Inductive Load 600 ± off R ¾ th ( (off) 10% 10 GT10Q101 Min Typ. ¾ ¾ ±500 ¾ ¾ ¾ 4.0 ¾ 2.1 ¾ 600 ¾ 0.07 ¾ 0.30 ¾ 0.16 (Note1) ¾ 0.50 ¾ ¾ 10% 90% 90% 10% 10 (on off on 2003-03-18 Max ...
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... GE 20 Common emitter Tc = 25° Gate-emitter voltage V ( – Common emitter 125°C - Gate-emitter voltage V ( Common emitter -40° Gate-emitter voltage V 20 Common emitter Tc = 125° Gate-emitter voltage V 4 Common emitter -60 -20 20 Case temperature Tc (°C) 3 GT10Q101 V – ( – ( – (sat 100 140 2003-03-18 ...
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... Switching loss Common emitter 600 ± 25° 125°C Note2 0.5 0 off 0.1 E off 0.05 0.03 0.01 300 500 GT10Q101 Switching time – Common emitter 600 ± 25° 125° Collector current I (A) C Switching time – I off ...
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... Common emitter ies 800 Tc = 25°C 600 C oes 400 C res 200 0 1000 < = 125°C 0 ± 0.1 1000 3000 1 3 (V) Collector-emitter voltage GT10Q101 – 600 400 200 100 Gate charge Q (nC) G Reverse bias SOA 10 30 100 300 1000 3000 (V) CE 2003-03-18 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 GT10Q101 000707EAA 2003-03-18 ...
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