GT10Q101 Toshiba, GT10Q101 Datasheet - Page 7

• Manufacturer Part Number: GT10Q101
• Description: IGBT, 1200V, TO-3P(N)
• Manufacturer: Toshiba

Specifications of GT10Q101

• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Max: 140W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: TO-3P
• No. Of Pins: 3
• Current Ic: RoHS Compliant
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Power Dissipation Pd: 140W
• Rohs Compliant: Yes
• Svhc: No SVHC
• Lead Free Status / Rohs Status: Not Compliant

This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.