GT10Q101 Toshiba, GT10Q101 Datasheet - Page 3

• Manufacturer Part Number: GT10Q101
• Description: IGBT, 1200V, TO-3P(N)
• Manufacturer: Toshiba

Specifications of GT10Q101

• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Max: 140W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: TO-3P
• No. Of Pins: 3
• Current Ic: RoHS Compliant
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Power Dissipation Pd: 140W
• Rohs Compliant: Yes
• Svhc: No SVHC
• Lead Free Status / Rohs Status: Not Compliant

20
16
12
20
16
12
20
16
12
8
4
0
8
4
0
8
4
0
0
0
0
Common emitter
V CE = 5 V
Common emitter
Tc = 25°C
Collector-emitter voltage V
Tc = 125°C
4
Gate-emitter voltage V
Gate-emitter voltage V
1
4
I C = 4 A
25
V
20
8
2
8
I
I
CE
C
C
– V
– V
-40
– V
10
GE
CE
15
GE
12
12
3
20
13
Common emitter
Tc = 25°C
GE
GE
CE
V GE = 10 V
(V)
(V)
16
16
4
(V)
12
20
20
5
3
20
16
12
20
16
12
4
3
2
1
0
-60
8
4
0
8
4
0
0
0
Common emitter
Tc = 125°C
Common emitter
V GE = 15 V
Tc = -40°C
Common emitter
-20
4
Gate-emitter voltage V
4
Gate-emitter voltage V
Case temperature Tc (°C)
I C = 4 A
I C = 4 A
V
V
V
20
CE (sat)
8
8
CE
CE
– V
– V
10
10
– Tc
GE
GE
12
12
60
20
GE
GE
20
(V)
(V)
100
I C = 4 A
16
16
GT10Q101
20
10
2003-03-18
140
20
20