GT10Q101 Toshiba, GT10Q101 Datasheet - Page 4

• Manufacturer Part Number: GT10Q101
• Description: IGBT, 1200V, TO-3P(N)
• Manufacturer: Toshiba

Specifications of GT10Q101

• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Max: 140W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: TO-3P
• No. Of Pins: 3
• Current Ic: RoHS Compliant
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Power Dissipation Pd: 140W
• Rohs Compliant: Yes
• Svhc: No SVHC
• Lead Free Status / Rohs Status: Not Compliant

0.05
0.03
0.01
0.05
0.5
0.3
0.1
0.5
0.3
0.1
0.5
0.3
0.1
10
1
5
3
1
3
1
3
3
3
Common emitter
V CC = 600 V
V GG = ±15 V
I C = 10 A
Common emitter
V CC = 600 V
V GG = ±15 V
I C = 10 A
Note2
5
5
5
t off
t on
t f
t r
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
Switching loss E
Switching time t
Switching time t
10
10
10
Gate resistance R
Gate resistance R
Gate resistance R
30
30
30
50
50
50
on
on
off
, E
G
G
G
, t
, t
Common emitter
V CC = 600 V
V GG = ±15 V
I C = 10 A
100
100
100
r
f
off
– R
– R
(9)
(9)
(9)
– R
: Tc = 25°C
: Tc = 125°C
G
G
G
300 500
300
E on
E off
300 500
500
4
0.05
0.03
0.01
0.05
0.03
0.01
0.05
0.5
0.3
0.1
0.5
0.3
0.1
0.5
0.3
0.1
10
1
3
1
5
3
1
0
0
0
Common emitter
V CC = 600 V
V GG = ±15 V
R G = 75 W
Common emitter
V CC = 600 V
V GG = ±15 V
R G = 75 W
Note2
E on
E off
t on
t off
t r
t f
2
: Tc = 25°C
: Tc = 125°C
2
: Tc = 25°C
: Tc = 125°C
2
Switching loss E
Switching time t
Switching time t
Collector current I
Collector current I
Collector current I
4
4
4
6
6
6
on
on
off
Common emitter
V CC = 600 V
V GG = ±15 V
R G = 75 W
C
C
, E
C
, t
, t
8
8
8
r
f
off
(A)
(A)
(A)
– I
– I
: Tc = 25°C
: Tc = 125°C
– I
C
C
C
10
10
10
GT10Q101
2003-03-18
12
12
12