SI5857DU-T1-GE3 Vishay, SI5857DU-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI5857DU-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 6A POWERPAK
• Manufacturer: Vishay

Specifications of SI5857DU-T1-GE3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 12V
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.058 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK ChipFET
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si5857DU
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.20
0.16
0.12
0.08
0.04
20
16
12
10
On-Resistance vs. Drain Current and Gate Voltage
8
4
0
8
6
4
2
0
0.0
0
0
V
V
GS
GS
I
D
= 5 V
= 4.5 V
0.5
= 5.1 A
2
V
4
V
GS
DS
Output Characteristics
Q
= 2.5 V
- Drain-to-Source Voltage (V)
g
1.0
- Total Gate Charge (nC)
I
4
D
Gate Charge
- Drain Current (A)
V
8
DS
= 10 V
1.5
V
6
GS
= 4 V
V
12
DS
2.0
8
= 16 V
V
GS
V
V
V
V
V
GS
GS
GS
GS
= 3.5 V
GS
16
2.5
= 4.5 V
10
= 2 V
= 2.5 V
= 1.5 V
= 3 V
3.0
12
20
800
700
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
GS
- 25
2
= 3.6 A
= 4.5 V
4
V
V
0.5
T
Transfer Characteristics
GS
DS
0
J
C
- Junction Temperature (°C)
rss
6
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
T
C
8
T
C
= 25 °C
= 125 °C
S09-2111-Rev. D, 12-Oct-09
1.0
C
50
C
10
oss
iss
Document Number: 73696
12
75
14
100
1.5
T
C
16
= - 55 °C
125
18
150
2.0
20