SI5857DU-T1-GE3 Vishay, SI5857DU-T1-GE3 Datasheet - Page 8

• Manufacturer Part Number: SI5857DU-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 6A POWERPAK
• Manufacturer: Vishay

Specifications of SI5857DU-T1-GE3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 12V
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.058 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK ChipFET
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si5857DU
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.0001
0.001
0.01
100
0.1
10
1
- 50
Reverse Current vs. Junction Temperature
- 25
T
0
J
20 V
- Junction Temperature (°C)
25
10 V
50
75
600
500
400
300
200
100
100
0
0
125
150
4
V
KA
Capacitance
- Reverse Voltage (V)
8
12
0.1
10
1
0
16
0.1
20
V
Forward Voltage Drop
F
T
J
- Forward Voltage Drop (V)
0.2
= 150 °C
S09-2111-Rev. D, 12-Oct-09
0.3
Document Number: 73696
0.4
T
J
= 25 °C
0.5
0.6